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J/SST108 Series Vishay Siliconix N-Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 SST108 SST109 SST110 VGS(off) (V) -3 to -10 -2 to -6 -0.5 to -4 rDS(on) Max (W) 8 ID(off) Typ (pA) 20 20 20 tON Typ (ns) 4 4 4 12 18 FEATURES D D D D D Low On-Resistance: J108 <8 W Fast Switching--tON: 4 ns Low Leakage: 20 pA Low Capacitance: 11 pF Low Insertion Loss BENEFITS D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error" Excellent Accuracy Good Frequency Response Eliminates Additional Buffering APPLICATIONS D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters DESCRIPTION The J/SST108 series is designed with high-performance analog switching applications in mind. It features low on-resistance, good off-isolation, and fast switching. The SST108 series is comprised of surface-mount devices featuring the lowest rDS(on) of any TO-236 (SOT-23) JFET device. The TO-226AA (TO-92) plastic package provides a low-cost option. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products packaged in TO-206AC (TO-52), see the 2N5432/5433/5434 data sheet. TO-226AA (TO-92) TO-236 (SOT-23) D 1 D 1 3 G S 2 S 2 G 3 Top View SST108 (I8)* SST109 (I9)* SST110 (I0)* *Marking Code for TO-236 Top View J108, J109, J110 Document Number: 70231 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-1 J/SST108 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST108 J/SST109 J/SST110 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS(F) IG = -1 mA , VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 10 mA VDS = 5 V, VGS = -10 V TA = 125_C VGS = 0 V, VDS v 0.1 V IG = 1 mA , VDS = 0 V -32 -25 -3 80 -10 -25 -2 40 -3 -3 -6 -25 V -0.5 10 -3 -4 mA -0.01 -5 -0.01 0.02 1.0 nA 3 3 3 8 0.7 12 18 W V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs VDS = 5 V, ID = 10 mA, f = 1 kHz gos rds(on) Ciss VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 0 V VGS = 0 V f = 1 MHz VDS = 0 V VGS = -10 V f = 1 MHz SST J Series SST J Series 60 60 11 11 3.5 15 15 15 nV Hz 85 85 85 pF 0.6 8 17 mS 12 18 W Crss en VDG = 5 V, ID = 10 mA f = 1 kHz Switching Turn-On Time td(on) tr td(off) tf VDD = 1.5 V, VGS(H) = 0 V See Switching Diagram 3 1 4 18 NIP ns Turn-Off Time Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 7-2 Document Number: 70231 S-04028--Rev. E, 04-Jun-01 J/SST108 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 20 rDS(on) - Drain-Source On-Resistance ( ) 1000 IDSS @ VDS = 15 V, VGS = 0 V 16 800 rDS(on) - Drain-Source On-Resistance ( ) 50 I DSS On-Resistance vs. Drain Current TA = 25_C rDS @ ID = 10 mA, VGS = 0 V - Saturation Drain Current (mA) 40 VGS(off) = -2 V 30 12 rDS 600 8 IDSS 400 20 -4 V 10 -8 V 0 1 10 ID - Drain Current (mA) 100 4 200 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 On-Resistance vs. Temperature 40 rDS(on) - Drain-Source On-Resistance ( ) ID = 10 mA rDS changes X 0.7%/_C 32 - Drain Current (mA) VGS(off) = -2 V 24 80 100 Output Characteristics VGS(off) = -2 V 60 VGS = 0 V -0.2 V 40 -0.4 V 20 -0.6 V -0.8 V 16 -4 V 8 -8 V 0 -55 -35 -15 5 25 45 65 85 105 125 I D 0 0 2 4 6 8 10 TA - Temperature (_C) VDS - Drain-Source Voltage (V) Turn-On Switching 5 tr approximately independent of ID VDD = 1.5 V, RG = 50 VGS(L) = -10 V Switching Time (ns) 30 Turn-Off Switching td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = -10 V 24 tf 18 VGS(off) = -2 V 4 Switchng Time (ns) 3 td(on) @ ID = 10 mA td(on) @ ID = 25 mA 2 12 VGS(off) = -8 V 1 tr 6 td(off) 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 5 10 15 20 25 ID - Drain Current (mA) Document Number: 70231 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-3 J/SST108 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance vs. Gate-Source Voltage 100 VDS = 0 V f = 1 MHz 80 Capacitance (pF) 100 VGS(off) = -4 V gfs - Forward Transconductance (mS) Transconductance vs. Drain Current 60 TA = -55_C 10 25_C 125_C 40 Ciss 20 Crss VDS = 5 V f = 1 kHz 1 0 0 -4 -8 -12 -16 -20 1 10 ID - Drain Current (mA) 100 VGS - Gate-Source Voltage (V) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 200 gfs and gos @ VDS = 5 V VGS = 0 V, f = 1 kHz 160 40 50 100 Noise Voltage vs. Frequency VDS = 5 V gos - Output Conductance (S) gfs - Forward Transconductance (mS) 120 gfs 30 en - Noise Voltage nV / Hz 10 ID = 10 mA 80 gos 20 40 10 40 mA 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 1 10 100 1k f - Frequency (Hz) 10 k 100 k Gate Leakage Current 100 nA TA = 125_C 10 nA - Gate Leakage 100 Common Gate Input Admittance gig 5 mA ID =10 mA 10 1 nA 1 mA IGSS @ 125_C 100 pA TA = 25_C 10 pA 10 mA 1 mA IGSS @ 25_C 1 pA 0 4 8 12 16 20 0.1 10 20 50 100 VDG - Drain-Gate Voltage (V) f - Frequency (MHz) 5 mA (mS) 1 I G big TA = 25_C VDG = 20 V ID = 20 mA www.vishay.com 7-4 Document Number: 70231 S-04028--Rev. E, 04-Jun-01 J/SST108 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common Gate Forward Admittance 100 -gfg 10 Common Gate Reverse Admittance TA = 25_C VDG = 20 V ID = 20 mA 10 (mS) (mS) 1.0 -grg -brg bfg 1 TA = 25_C VDG = 20 V ID = 20 mA 0.1 10 20 f - Frequency (MHz) 50 100 0.1 0.01 10 20 50 100 f - Frequency (MHz) Common Gate Output Admittance 100 TA = 25_C VDG = 20 V ID = 20 mA 10 bog (mS) gog 1 0.1 10 20 f - Frequency (MHz) 50 100 SWITCHING TIME TEST CIRCUIT J/SST108 VGS(L) RL* ID(on) *Non-inductive -12 V 150 W 10 mA VDD J/SST109 -7 V 150 W 10 mA J/SST110 -5 V 150 W 10 mA VGS(H) VGS(L) RL OUT INPUT PULSE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz SAMPLING SCOPE Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VIN Scope 1 k 51 51 Document Number: 70231 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-5 |
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